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Frequent co-authors 10

Kevin Zhang 8 shared papers
Yih Wang 7 shared papers
Uddalak Bhattacharya 5 shared papers
Umut Arslan 5 shared papers
Yong-Gee Ng 5 shared papers
Liqiong Wei 4 shared papers
Mark Bohr 4 shared papers
Mesut Meterelliyoz 4 shared papers
Pulkit Jain 4 shared papers
Kevin Fischer 3 shared papers

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Fatih Hamzaoglu

eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology

2

Circuit-level techniques to control gate leakage for sub-100nm CMOS

Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOS

Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs

Non-Manhattan maze routing

An offset-cancelling four-phase voltage sense amplifier for resistive memories in 14nm CMOS

A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications

Session 31 overview: Computation in memory for machine learning: Technology directions and memory subcommittees

Session 7 overview: Non-volatile memory solutions: Memory subcommittee

F2: Memory trends: From big data to wearable devices

A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique

A 3.6Mb 10.1Mb/mm

13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology

A 4.2GHz 0.3mm2 256kb Dual-V

16.2 eDRAM-CIM: Compute-In-Memory Design with Reconfigurable Embedded-Dynamic-Memory Array Realizing Adaptive Data Converters and Charge-Domain Computing

A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation

A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management